The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2017

Filed:

Jul. 22, 2009
Applicants:

Yasushi Nakayama, Tokyo, JP;

Ryosuke Nakagawa, Tokyo, JP;

Inventors:

Yasushi Nakayama, Tokyo, JP;

Ryosuke Nakagawa, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02M 1/08 (2006.01); H03K 17/0812 (2006.01); H03K 17/06 (2006.01);
U.S. Cl.
CPC ...
H02M 1/08 (2013.01); H03K 17/08128 (2013.01); H03K 2017/066 (2013.01); H03K 2217/0081 (2013.01);
Abstract

In order to obtain a drive circuit of a power semiconductor device capable of making a fast response to a voltage fluctuation dV/dt and preventing a malfunction of the power semiconductor device while suppressing power consumption with a simple circuit configuration, a control circuit controlling ON and OFF switching of the power semiconductor device, a DC power supply supplying a voltage between control terminals of the power semiconductor device, and a switching element connected between the control terminals of the power semiconductor device are provided. The switching element turns ON in a case where a power supply voltage of the DC power supply drops or in a case where the voltage between the control terminals of the power supply device increases in a state where the power supply voltage of the DC power supply has dropped, and thereby causes a short-circuit between the control terminals of the power semiconductor device.


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