The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Dec. 30, 2015
Tsinghua University, Beijing, CN;
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Guan-Hong Li, Beijing, CN;
Qun-Qing Li, Beijing, CN;
Yuan-Hao Jin, Beijing, CN;
Shou-Shan Fan, Beijing, CN;
Tsinghua University, Beijing, CN;
HON HAI PRECISION INDUSTRY CO., LTD., New Taipei, TW;
Abstract
A method of making N-type semiconductor layer includes following steps. An insulating substrate is provided. A semiconductor carbon nanotube layer is formed on the insulating substrate. An MgO layer is deposited on the semiconductor carbon nanotube layer. A functional dielectric layer is located on the MgO layer. A source electrode and drain electrode are formed to electrically connect the semiconductor carbon nanotube layer. A gate electrode is formed on the functional dielectric layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile