The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2017

Filed:

Mar. 29, 2013
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

James A. Brug, Palo Alto, CA (US);

Lihua Zhao, Palo Alto, CA (US);

Carl A. Taussig, Palo Alto, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); H01L 27/32 (2006.01); H01L 51/56 (2006.01); H01L 51/50 (2006.01); H01L 51/52 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0012 (2013.01); H01L 27/3244 (2013.01); H01L 27/3246 (2013.01); H01L 27/3276 (2013.01); H01L 51/0004 (2013.01); H01L 51/0096 (2013.01); H01L 51/0021 (2013.01); H01L 51/0024 (2013.01); H01L 51/5012 (2013.01); H01L 51/5203 (2013.01); H01L 51/56 (2013.01); H01L 2227/323 (2013.01); H01L 2251/105 (2013.01); Y02P 70/521 (2015.11);
Abstract

An example provides a method for forming an apparatus including a substrate imprinted with a pattern for forming isolated device regions. A method may include imprinting an unpatterned area of a substrate with a pattern to form a patterned substrate having a plurality of recessed regions at a first level and a plurality of elevated regions at a second level, and depositing a first layer of conductive material over the patterned substrate with a plurality of breaks to form a plurality of bottom electrodes. The method may include depositing a layer of an active stack, with a second layer of conductive material, over the plurality of bottom electrodes to form a plurality of devices on the plurality of recessed regions isolated from each other by the plurality of elevated regions.


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