The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Oct. 21, 2016
Applicant:
Sandisk Technologies Llc, Plano, TX (US);
Inventors:
Ming-Che Wu, San Jose, CA (US);
Chuanbin Pan, San Jose, CA (US);
Guangle Zhou, Fremont, CA (US);
Tanmay Kumar, Pleasanton, CA (US);
Assignee:
SANDISK TECHNOLOGIES LLC, Plano, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/124 (2013.01); G11C 13/004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01); H01L 45/085 (2013.01); H01L 45/1246 (2013.01); H01L 45/1266 (2013.01); H01L 45/146 (2013.01); H01L 45/1675 (2013.01);
Abstract
A resistive memory device includes a first electrode, a sidewall spacer electrode located on a sidewall of a dielectric material contacting the first electrode, a resistive memory cell containing a resistive memory material and contacting the sidewall spacer electrode, and a second electrode containing the resistive memory cell.