The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2017

Filed:

Jan. 28, 2014
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Werner Bergbauer, Windberg, DE;

Philipp Drechsel, Regensburg, DE;

Peter Stauβ, Regensburg, DE;

Patrick Rode, Regensburg, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0256 (2006.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01); H01L 31/18 (2006.01); H01L 33/02 (2010.01); H01L 33/22 (2010.01); H01L 33/24 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0075 (2013.01); H01L 31/03044 (2013.01); H01L 31/035272 (2013.01); H01L 31/1856 (2013.01); H01L 31/1892 (2013.01); H01L 33/007 (2013.01); H01L 33/0025 (2013.01); H01L 33/0079 (2013.01); H01L 33/025 (2013.01); H01L 33/12 (2013.01); H01L 33/22 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01);
Abstract

A semiconductor layer sequence includes a first nitridic compound semiconductor layer, a second nitridic compound semiconductor layer, and an intermediate layer arranged between the first and second nitridic compound semiconductor layers. Beginning with the first nitridic compound semiconductor layer, the intermediate layer and the second nitridic compound semiconductor layer are arranged one after the other in a direction of growth of the semiconductor layer sequence and are adjacent to each other in direct succession. The intermediate layer has a lattice constant different from the lattice constant of the first nitridic compound semiconductor layer at least at some points. The second nitridic compound semiconductor layer is lattice-adapted to the intermediate layer at least at some points.


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