The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Jan. 06, 2011
Magnus Ahlstedt, Regensburg, DE;
Lutz Höppel, Alteglofsheim, DE;
Matthias Peter, Alteglofsheim, DE;
Matthias Sabathil, Regensburg, DE;
Uwe Strauss, Bad Abbach, DE;
Martin Strassburg, Tegernheim, DE;
Magnus Ahlstedt, Regensburg, DE;
Lutz Höppel, Alteglofsheim, DE;
Matthias Peter, Alteglofsheim, DE;
Matthias Sabathil, Regensburg, DE;
Uwe Strauss, Bad Abbach, DE;
Martin Strassburg, Tegernheim, DE;
OSRAM Opto Semiconductors GmbH, Regensburg, DE;
Abstract
A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified.