The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Apr. 30, 2015
Applicant:
William Marsh Rice University, Houston, TX (US);
Inventors:
Bob Yi Zheng, Oceanside, CA (US);
Yumin Wang, Houston, TX (US);
Nancy J. Halas, Houston, TX (US);
Peter Nordlander, Houston, TX (US);
Assignee:
William Marsh Rice University, Houston, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 31/108 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1085 (2013.01); H01L 31/02327 (2013.01); H01L 31/18 (2013.01);
Abstract
A metal-semiconductor-metal photodetecting device and method of manufacturing a metal-semiconductor-metal photodetecting device that includes a p-type silicon substrate with an oxide layer disposed on the p-type silicon substrate. Schotty junctions are disposed adjacent to the oxide layer on the p-type silicon substrate and a plasmonic grating disposed on the oxide layer. The plasmonic grating provides wavelength range selectability for the photodetecting device.