The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Aug. 09, 2013
Applicants:
University of Kansas, Lawrence, KS (US);
Bing LI, Chengdu, CN;
Liang-huan Feng, Chengdu, CN;
Inventors:
Assignee:
University of Kansas, Lawrence, KS (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 31/0392 (2006.01); H01L 31/073 (2012.01); B82Y 20/00 (2011.01); H01L 31/0296 (2006.01); H01L 31/0336 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035236 (2013.01); B82Y 20/00 (2013.01); H01L 31/0296 (2013.01); H01L 31/0336 (2013.01); H01L 31/03925 (2013.01); H01L 31/073 (2013.01); H01L 31/18 (2013.01); H01L 31/1828 (2013.01); Y02E 10/543 (2013.01);
Abstract
Disclosed are ultrathin layers of group II-VI semiconductors, group II-VI semiconductor superlattice structures, photovoltaic devices incorporating the layers and superlattice structures and related methods. The superlattice structures comprise an ultrathin layer of a first group II-VI semiconductor alternating with an ultrathin layer of at least one additional semiconductor, e.g., a second group II-VI semiconductor, or a group IV semiconductor, or a group III-V semiconductor.