The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Jun. 01, 2015
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Oki Gunawan, Fair Lawn, NJ (US);
Jeehwan Kim, Los Angeles, CA (US);
David B. Mitzi, Mahopac, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Teodor K. Todorov, Yorktown Heights, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/032 (2006.01); H01L 31/18 (2006.01); H01L 31/076 (2012.01); H01L 31/078 (2012.01); C23C 14/34 (2006.01); C25D 7/12 (2006.01); H01L 31/20 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0326 (2013.01); C23C 14/34 (2013.01); C25D 7/12 (2013.01); H01L 31/076 (2013.01); H01L 31/078 (2013.01); H01L 31/18 (2013.01); H01L 31/20 (2013.01); Y02E 10/548 (2013.01);
Abstract
A photosensitive device and method includes a top cell having an N-type layer, a P-type layer and a top intrinsic layer therebetween. A bottom cell includes an N-type layer, a P-type layer and a bottom intrinsic layer therebetween. The bottom intrinsic layer includes a Cu—Zn—Sn containing chalcogenide.