The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Jul. 21, 2015
Applicant:
Tokuyama Corporation, Yamaguchi, JP;
Inventors:
Toru Kinoshita, Yamaguchi, JP;
Toru Nagashima, Yamaguchi, JP;
Assignee:
Tokuyama Corporation, Yamaguchi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/872 (2006.01); C30B 29/40 (2006.01); C30B 25/20 (2006.01); C30B 25/12 (2006.01); C30B 25/10 (2006.01); H01L 29/207 (2006.01); H01L 29/47 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); C30B 25/10 (2013.01); C30B 25/12 (2013.01); C30B 25/20 (2013.01); C30B 29/403 (2013.01); H01L 29/207 (2013.01); H01L 29/47 (2013.01);
Abstract
A silicon-doped n-type aluminum nitride monocrystalline substrate wherein, at a photoluminescence measurement at 23° C., a ratio (I1/I2) between the emission spectrum intensity (I1) having a peak within 370 to 390 nm and the emission peak intensity (I2) of the band edge of aluminum nitride is 0.5 or less; a thickness is from 25 to 500 μm; and a ratio (electron concentration/silicon concentration) between the electron concentration and the silicon concentration at 23° C. is from 0.0005 to 0.001.