The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Mar. 22, 2016
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Akihisa Shimomura, Atsugi, JP;
Tetsuhiro Tanaka, Kiyose, JP;
Masayuki Kimura, Atsugi, JP;
Ryo Tokumaru, Isehara, JP;
Daisuke Matsubayashi, Ebina, JP;
Yasumasa Yamane, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
A semiconductor device including a miniaturized transistor is provided. The semiconductor device includes a first insulator, a second insulator, a semiconductor, and a conductor. The semiconductor is over the first insulator. The second insulator is over the semiconductor. The conductor is over the second insulator. The semiconductor includes a first region, a second region, and a third region. The first region is a region where the semiconductor overlaps with the conductor. Each of the second region and the third region is a region where the semiconductor does not overlap with the conductor. The second region and the third region each have a region with a spinel crystal structure.