The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Jul. 13, 2016
Rohm Co., Ltd., Kyoto, JP;
Hiroshi Kumano, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A semiconductor device includes a first conductivity type semiconductor layer, a second conductivity type body region in a semiconductor layer surface portion, a first conductivity type source region in a body region surface, apart from a peripheral edge of the body region, a first conductivity type drain region in the semiconductor layer surface portion apart from the body region, a gate electrode opposing the body region across a gate insulating film between the source and drain regions, an insulating layer on the semiconductor layer, resin on the insulating layer, a source electrode in the insulating layer, electrically connected to the source region, a drain electrode in the insulating layer, electrically connected to the drain region, and conductive shielding in the insulating layer, overlapping in a plan view from a direction normal to a semiconductor layer surface, the drain region and the gate electrode, and covering a region between them.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile