The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2017

Filed:

Mar. 15, 2016
Applicant:

Hon Hai Precision Industry Co., Ltd., New Taipei, TW;

Inventors:

Hsin-Hua Lin, New Taipei, TW;

Po-Li Shih, New Taipei, TW;

Yi-Chun Kao, New Taipei, TW;

Chang-Chun Wan, Hsinchu, TW;

Wei-Chih Chang, New Taipei, TW;

I-Wei Wu, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/45 (2006.01); H01L 21/4763 (2006.01); H01L 21/477 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01); H01L 21/441 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66969 (2013.01); H01L 21/441 (2013.01); H01L 21/477 (2013.01); H01L 21/47635 (2013.01); H01L 29/24 (2013.01); H01L 29/45 (2013.01); H01L 29/7869 (2013.01);
Abstract

A method of providing a conducting structure over a substrate, which comprises: disposing a lower sub-layer over a substrate, the lower sub-layer comprising a conductive metal oxide material that includes indium and zinc, wherein the indium and zinc content in the bottom sub-layer substantially defines a first indium to zinc content ratio; performing a first hydrogen treatment over an exposed surface of the lower sub-layer for introducing hydrogen content therein; disposing a middle sub-layer over the lower sub-layer, the middle sub-layer comprising a metal material; disposing an upper sub-layer over the middle sub-layer, the upper sub-layer comprising a conductive metal oxide material that includes indium and zinc, wherein the indium and the zinc content in the upper sub-layer substantially defines a second indium to zinc content ratio smaller than the first indium to zinc content ratio; and patterning the multi-layered conductive structure to generate a composite lateral etch profile.


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