The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Jun. 19, 2014
Applicant:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Inventors:
Assignee:
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 29/08 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 21/04 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66068 (2013.01); H01L 21/0465 (2013.01); H01L 29/086 (2013.01); H01L 29/0856 (2013.01); H01L 29/0869 (2013.01); H01L 29/0878 (2013.01); H01L 29/0886 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/66712 (2013.01); H01L 29/7395 (2013.01); H01L 29/7802 (2013.01);
Abstract
The steps of preparing a silicon carbide layer having a main surface, forming on the main surface, a first mask layer located on a first region to be a channel region and having a first opening portion on each of opposing regions with the first region lying therebetween, and forming a high-concentration impurity region having a first conductivity type and being higher in impurity concentration than the silicon carbide layer in a region exposed through the first opening portion, by implanting ions into the main surface with the first mask layer being interposed are included.