The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Sep. 19, 2016
Applicants:
Dritan Celo, Nepean, CA;
Dominic John Goodwill, Ottawa, CA;
Eric Bernier, Kanata, CA;
Inventors:
Assignee:
Huawei Technologies Co., Ltd., Shenzhen, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/102 (2006.01); H01L 27/144 (2006.01); H01L 31/02 (2006.01); H01L 31/0232 (2014.01); H01L 27/146 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1443 (2013.01); H01L 27/14643 (2013.01); H01L 27/14647 (2013.01); H01L 27/14652 (2013.01); H01L 31/02019 (2013.01); H01L 31/02325 (2013.01); H01L 27/0248 (2013.01);
Abstract
The present application provides an electrostatic discharge guard structure for photonic platform based photodiode systems. In particular this application provides a photodiode assembly comprising: a photodiode (such as a Si or SiGe photodiode); a waveguide (such as a silicon waveguide); and a guard structure, wherein the guard structure comprises a diode, extends about all or substantially all of the periphery of the Si or SiGe photodiode and allows propagation of light from the silicon waveguide into the Si or SiGe photodiode.