The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2017

Filed:

May. 29, 2014
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Seongyeol Yoo, Beijing, CN;

Seungjin Choi, Beijing, CN;

Heecheol Kim, Beijing, CN;

Youngsuk Song, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1288 (2013.01); G02F 1/1368 (2013.01); G02F 1/136286 (2013.01); H01L 27/124 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78618 (2013.01); G02F 2001/136295 (2013.01);
Abstract

A manufacturing method of a thin film transistor, a manufacturing method of an array substrate and an array substrate are provided. The manufacturing method of the thin film transistor comprises: forming an active layer, a source electrode and a drain electrode on a substrate by one patterning process, the active layer, the source electrode and the drain electrode being located in a same layer. The manufacturing method of the thin film transistor can effectively reduce the number of patterning processes, so as to enhance the capacity in mass production, and reduce the cost.


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