The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Mar. 17, 2017
Toshiba Memory Corporation, Minato-ku, JP;
Yoichi Minemura, Yokkaichi, JP;
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Abstract
According to one embodiment, a semiconductor memory device includes first to fourth conductive layers, a first intermediate insulating layer, a second intermediate insulating layer, an inter-layer insulating layer, a first semiconductor body, a first memory layer, a second semiconductor body, a second memory layer, and a first interconnect. The second conductive layer is separated from the first conductive layer in a first direction. The third conductive layer is arranged with the first conductive layer in a second direction crossing the first direction. The fourth conductive layer is separated from the third conductive layer in the first direction and arranged with the second conductive layer in the second direction. The first intermediate insulating layer is provided between the first conductive layer and the third conductive layer. The second intermediate insulating layer is provided between the second conductive layer and the fourth conductive layer.