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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9806090 B1

PDFFull Text
Expired
Date of Patent:
Oct. 31, 2017

Filed:

Jun. 09, 2016

Vertical floating gate nand with selectively deposited ald metal films

Applicant:

Sandisk Technologies Llc, Plano, TX (US);

Inventors:

Rahul Sharangpani, Fremont, CA (US);

Raghuveer S. Makala, Campbell, CA (US);

Thomas Jongwan Kwon, Dublin, CA (US);

Senaka Kanakamedala, San Jose, CA (US);

George Matamis, Danville, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Plano, TX (US);

Attorney:

The Marbury Law Group PLLC

Primary Examiner:

Viet Q Nguyen

Int. Cl.
CPC ...
G11C 11/34 (2006.01); H01L 27/11556 (2017.01); H01L 29/423 (2006.01); G11C 16/04 (2006.01); G11C 16/06 (2006.01); H01L 29/788 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/311 (2006.01); H01L 21/3205 (2006.01); H01L 21/02 (2006.01); H01L 27/11519 (2017.01); H01L 27/11524 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); G11C 16/0408 (2013.01); G11C 16/06 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02238 (2013.01); H01L 21/28273 (2013.01); H01L 21/28556 (2013.01); H01L 21/28562 (2013.01); H01L 21/28568 (2013.01); H01L 21/31111 (2013.01); H01L 21/32055 (2013.01); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01); H01L 29/42332 (2013.01); H01L 29/7883 (2013.01);
Abstract

A method of making a monolithic three dimensional NAND string which contains a semiconductor channel and a plurality of control gate electrodes, includes selectively forming a plurality of discrete charge storage regions using atomic layer deposition. The plurality of discrete charge storage regions includes at least one of a metal or an electrically conductive metal oxide.

Find Patent Forward Citations

Sharangpani, Rahul. (2017). Vertical floating gate nand with selectively deposited ald metal films (U.S. Patent No. 9806090). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9806090

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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