The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2017

Filed:

Jul. 06, 2015
Applicants:

Jaekyu Lee, Seongnam-si, KR;

Kiseok Suh, Hwaseong-si, KR;

Inventors:

Jaekyu Lee, Seongnam-si, KR;

Kiseok Suh, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/535 (2006.01); H01L 45/00 (2006.01); H01L 27/22 (2006.01); H01L 27/24 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H01L 27/228 (2013.01); H01L 27/2436 (2013.01); H01L 27/2463 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/144 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 27/10855 (2013.01); H01L 27/10876 (2013.01); H01L 27/10885 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor memory device includes a device isolation in a trench that defines first to third active patterns that are spaced apart from each other and having a long axis parallel to a first direction, first and second word lines extending in a second direction perpendicular to the first direction, a bit line, and a source line. The first and second active patterns are arranged in the second direction to constitute a column. The third active pattern is at a side of the column. The first word line intersects the first and second active patterns. The second word line intersects the third active pattern. When viewed from a plan view, the bit line extends in the first direction between the first and third active patterns, and the source line extends in the first direction between the second and third active patterns.


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