The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2017

Filed:

May. 12, 2016
Applicant:

Soitec, Bernin, FR;

Inventors:

Sebastien Mougel, Saint Martin d'Heres, FR;

Didier Masselin, Le Cheylas, FR;

Assignee:

Soitec, , FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/324 (2006.01); H01L 21/66 (2006.01); H01L 27/12 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7624 (2013.01); H01L 21/324 (2013.01); H01L 21/67248 (2013.01); H01L 21/76254 (2013.01); H01L 22/20 (2013.01); H01L 27/1229 (2013.01); H01L 27/1266 (2013.01);
Abstract

A calibration method for determining temperature set point corrections to be applied to the nominal temperature set points of each of the N heating zones of a heat treatment unit having L substrate locations, includes the following steps: establishing a sensitivity model linking variations of a substrate characteristic at each of M representative locations of the L locations to temperature set point variations applied in each of the N heating zones, the variations respectively reflecting differences with respect to a target characteristic and with respect to the nominal set points; executing the process in the heat treatment unit and on the basis of nominal set points; measuring the substrate characteristic at least at a representative measurement location of each heating zone of the unit to supply M measurements; and determining temperature set point corrections from the sensitivity model, the measurements and the target substrate characteristic.


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