The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Jun. 29, 2016
Fuji Electric Co., Ltd., Kanagawa, JP;
Ryo Tanaka, Santa Barbara, CA (US);
Shinya Takashima, Hachioji, JP;
Katsunori Ueno, Matsumoto, JP;
Masaharu Edo, Tokorozawa, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
A method of manufacturing a nitride semiconductor device is provided, comprising: forming, on a substrate, a first laminated body where a first nitride semiconductor layer, a second nitride semiconductor layer and a third nitride semiconductor layer are laminated in this order; subsequent to the forming, removing a partial region of the third nitride semiconductor layer, subsequent to the removing; implanting ions to the first nitride semiconductor layer from the partial region where the third nitride semiconductor layer is removed at least through the second nitride semiconductor layer; and subsequent to the implanting the ions, annealing the first laminated body.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile