The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2017

Filed:

Jun. 07, 2016
Applicant:

International Frontier Technology Laboratory, Inc., Tokyo, JP;

Inventors:

Nobuaki Komatsu, Tokyo, JP;

Tomoko Ito, Tokyo, JP;

Hiroki Nagai, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 9/20 (2006.01);
U.S. Cl.
CPC ...
H01G 9/2018 (2013.01); H01G 9/2004 (2013.01); H01G 9/2027 (2013.01); H01G 9/2031 (2013.01); H01G 9/2059 (2013.01); H01G 9/2072 (2013.01); H01L 2251/306 (2013.01); Y02E 10/542 (2013.01);
Abstract

In order to increase the generation efficiency of a silicon dioxide solar cell, two conductive substrates are arranged so that the conductive surfaces thereof face each other, at least one of the substrates is disposed upon the substrate facing the light entry-side substrate, and an electrolyte is filled between the silicon dioxide particles compact and the light entry-side substrate. Silicon dioxide solar cells having this configuration exhibit a significantly increased short circuit current and open circuit voltage in comparison to solar cells in which the silicon dioxide and the electrolyte are mixed. This configuration can further be improved by disposing a titanium dioxide solar cell or a dye-sensitized titanium dioxide solar cell upon the light entry-side substrate to further increase the short circuit current and the open circuit voltage.


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