The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Mar. 06, 2013
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Joon-Ho Lee, Hwaseong-si, KR;
Gwang-Ok Go, Suwon-si, KR;
Kyung-Ho Shin, Seongnam-si, KR;
Mi-Hyang Lee, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A nonvolatile memory device includes a first area of single-level cells (SLCs) and a second area of multi-level cells (MLCs). The device determines whether a free block can be created by copying data between memory blocks of the first area. Upon determining that the free memory block can be created by copying data between the memory blocks of the first area, the device copies the data between the memory blocks of the first area to create the free memory block. Otherwise, the device selects at least one memory block from the first area and allocates the selected memory block as free memory block by copying the data stored in the selected memory block of the first area to the second area.