The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Aug. 22, 2016
Stmicroelectronics (Rousset) Sas, Rousset, FR;
Jimmy Fort, Puyloubier, FR;
Thierry Soude, Marseille, FR;
STMicroelectronics (Rousset) SAS, Rousset, FR;
Abstract
A circuit includes a first PMOS transistor that includes a first PMOS source coupled to a first input node, a first PMOS gate, and a first PMOS drain. A second PMOS transistor includes a second PMOS source coupled to a second input node, a second PMOS gate, and a second PMOS drain coupled to the second PMOS gate. A first resistor coupled between the first PMOS source and a ground node. A first diode element coupled between the first resistor and the ground node and a second diode element coupled between the second PMOS source and the ground node. A third PMOS transistor includes a third PMOS gate, a third PMOS source coupled to a supply node, and a third PMOS drain coupled to the first input node. A fourth PMOS transistor includes a fourth PMOS gate coupled to the third PMOS gate, a fourth PMOS source coupled to the supply node, and a fourth PMOS drain coupled to the second input node.