The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2017

Filed:

Feb. 16, 2016
Applicants:

Shanghai Tianma Micro-electronics Co., Ltd., Shanghai, CN;

Tianma Micro-electronics Co., Ltd., Shenzhen, CN;

Inventors:

Zhaokeng Cao, Shanghai, CN;

Zhongshou Huang, Shanghai, CN;

Long Zhang, Xiamen, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/1335 (2006.01); G02F 1/1343 (2006.01);
U.S. Cl.
CPC ...
G02F 1/133528 (2013.01); G02F 1/134363 (2013.01); G02F 2001/133531 (2013.01); G02F 2001/133538 (2013.01);
Abstract

A liquid crystal display panel includes: a first polarization layer, a second polarization layer, and a liquid crystal layer located between the two polarization layers. Liquid crystal molecules in the liquid crystal layer are initially aligned along a first direction. At least one first region and at least one second region are defined in the first polarization layer and the second polarization layer. In the first region, the absorption axis of the first polarization layer extends along the first direction while the absorption axis of the second polarization layer is perpendicular to the first direction. In the second region, the absorption axis of the first polarization layer extends along a second direction while the absorption axis of the second polarization layer is perpendicular to the second direction. A first angle formed by the second direction and the first direction is greater than 0 degree but less than 90 degrees.


Find Patent Forward Citations

Loading…