The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Jan. 30, 2015
Applicant:
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Inventors:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka-shi, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 6/028 (2006.01); G02B 6/036 (2006.01); C03C 13/04 (2006.01); C03C 25/10 (2006.01);
U.S. Cl.
CPC ...
G02B 6/0288 (2013.01); C03C 13/046 (2013.01); C03C 25/107 (2013.01); G02B 6/0365 (2013.01); C03C 2201/28 (2013.01); C03C 2201/31 (2013.01); G02B 6/03627 (2013.01);
Abstract
An embodiment of the invention relates to a GI-MMF with a structure for achieving widening of bandwidth in a wider wavelength range and improving manufacturing easiness of a refractive index profile in a core. In an example of the GI-MMF, a whole region of the core is doped with Ge and a part of the core is doped with P. Namely, the Ge-doped region coincides with the whole region of the core and the Ge-doped region is comprised of a partially P-doped region doped with Ge and P; and a P-undoped region doped with Ge but not intentionally doped with P.