The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Sep. 30, 2015
Landauer, Inc., Glenwood, IL (US);
Purdue Research Foundation, West Lafayette, IN (US);
Sean M. Scott, West Lafayette, IN (US);
PURDUE RESEARCH FOUNDATION, West Lafayette, IN (US);
Abstract
An apparatus is disclosed comprising a metal oxide semiconductor capacitor (MOSCAP) comprising one or more gate layers disposed over a contiguous radiation-sensitive insulating layer, wherein the contiguous radiation-sensitive insulating layer comprises one or more contacting dielectric layers. A method may be employed to measure a value of a radiation-induced capacitance response of a metal oxide semiconductor capacitor (MOSCAP) from multiple non-contacting gate layers disposed over a radiation-sensitive layer comprising of one or more contacting dielectric layers to thereby enhance a sensitivity and a resolution of a radiation response of the MOSCAP.