The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
Feb. 27, 2017
Applicant:
Skyworks Solutions, Inc., Woburn, MA (US);
Inventors:
Yuan Li, Cedar Rapids, IA (US);
Edward F. Lawrence, Marion, IA (US);
Assignee:
Skyworks Solutions, Inc., Woburn, WA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/44 (2006.01); H04B 1/40 (2015.01); H03K 17/687 (2006.01); H04B 1/3827 (2015.01);
U.S. Cl.
CPC ...
H04B 1/40 (2013.01); H03K 17/6872 (2013.01); H04B 1/3827 (2013.01); H04B 1/44 (2013.01);
Abstract
Described herein are circuits and methods for improving switch performance when overdriving the gate by adding a delay on a PMOS gate voltage such that it can turn on the PMOS during switch state transition to allow charge/discharge of the switch body voltage faster and it can turn off once the process is complete. For example, back-to-back diodes can be used to separate the PMOS gate and drain. This can reduce leakage current and can reduce or eliminate the potential for breakdown of the switch.