The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
Apr. 19, 2012
Applicants:
Thibaud Delahaye, Tresques, FR;
Mathilde Rieu, Grenoble, FR;
Inventors:
Thibaud Delahaye, Tresques, FR;
Mathilde Rieu, Grenoble, FR;
Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B05D 5/12 (2006.01); H01M 8/1097 (2016.01); C04B 35/01 (2006.01); C04B 35/16 (2006.01); C04B 35/486 (2006.01); C04B 35/624 (2006.01); C04B 35/626 (2006.01); C04B 35/632 (2006.01); C25B 11/04 (2006.01); H01M 4/86 (2006.01); H01M 4/88 (2006.01); H01M 4/90 (2006.01); H01M 8/1213 (2016.01); H01M 8/124 (2016.01);
U.S. Cl.
CPC ...
H01M 8/1097 (2013.01); C04B 35/01 (2013.01); C04B 35/16 (2013.01); C04B 35/486 (2013.01); C04B 35/624 (2013.01); C04B 35/6263 (2013.01); C04B 35/6325 (2013.01); C25B 11/04 (2013.01); H01M 4/8621 (2013.01); H01M 4/8828 (2013.01); H01M 4/8889 (2013.01); C04B 2235/3224 (2013.01); C04B 2235/3225 (2013.01); C04B 2235/3246 (2013.01); C04B 2235/3279 (2013.01); C04B 2235/3287 (2013.01); C04B 2235/441 (2013.01); C04B 2235/443 (2013.01); C04B 2235/6562 (2013.01); C04B 2235/6565 (2013.01); C04B 2235/6567 (2013.01); H01M 4/9033 (2013.01); H01M 4/9066 (2013.01); H01M 8/1213 (2013.01); H01M 2008/1293 (2013.01); H01M 2300/0077 (2013.01); Y02E 60/366 (2013.01);
Abstract
The present invention relates to a method for preparing an electrode-supported electrochemical half-cell including a step consisting in subjecting a green electrode layer on which a precursor gel of the electrolyte or a precursor thereof is deposited to sintering at a temperature of less than or equal to 1350° C.