The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
Mar. 11, 2016
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Inventors:
Tsunenori Suzuki, Kanagawa, JP;
Nozomi Komatsu, Kanagawa, JP;
Harue Osaka, Kanagawa, JP;
Hiromi Seo, Kanagawa, JP;
Satoshi Seo, Kanagawa, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/50 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/5012 (2013.01); H01L 51/506 (2013.01); H01L 51/5052 (2013.01); H01L 51/5056 (2013.01); H01L 51/5088 (2013.01); H01L 51/006 (2013.01); H01L 51/0052 (2013.01); H01L 51/0054 (2013.01); H01L 51/0058 (2013.01); H01L 51/0059 (2013.01); H01L 51/0072 (2013.01); H01L 51/0074 (2013.01);
Abstract
Provided is a light-emitting element in which an adverse effect by halides in an EL layer is suppressed and which can be provided with low cost. The light-emitting element including at least two layers between an anode and a light-emitting layer. One of the two layers which is closer to the anode has higher concentration of halides and halogen elements than the other layer closer to the light-emitting layer.