The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2017

Filed:

Dec. 15, 2016
Applicant:

National Technology & Engineering Solutions of Sandia, Llc, Albuquerque, NM (US);

Inventors:

Ting S. Luk, Albuquerque, NM (US);

Salvatore Campione, Albuquerque, NM (US);

Michael B. Sinclair, Albuquerque, NM (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/26 (2010.01); H01L 33/06 (2010.01); H01L 33/30 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/0025 (2013.01); H01L 33/30 (2013.01);
Abstract

A novel thermal source comprising a semiconductor hyperbolic metamaterial provides control of the emission spectrum and the angular emission pattern. These properties arise because of epsilon-near-zero conditions in the semiconductor hyperbolic metamaterial. In particular, the thermal emission is dominated by the epsilon-near-zero effect in the doped quantum wells composing the semiconductor hyperbolic metamaterial. Furthermore, different properties are observed for s and p polarizations, following the characteristics of the strong anisotropy of hyperbolic metamaterials.


Find Patent Forward Citations

Loading…