The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
Apr. 03, 2014
Joled Inc., Tokyo, JP;
Yuta Sugawara, Tokyo, JP;
JOLED INC., Tokyo, JP;
Abstract
A TFT device including: a gate electrode; a channel layer above the gate electrode; a channel protection layer on the channel layer; an electrode pair on the channel protection layer composed of a source electrode and a drain electrode that are spaced away from one another, a part of each of the source electrode and the drain electrode in contact with the channel layer through the channel protection layer; and a passivation layer extending over the gate electrode, the channel layer, the electrode pair, and the channel protection layer. The channel layer is made of an oxide semiconductor. The TFT device has a first sub-layer made of one of silicon nitride and silicon oxynitride and in which Si—H density is no greater than 2.3×10cm. The first sub-layer is included in at least one of the channel protection layer and the passivation layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile