The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
Jan. 26, 2015
Applicant:
Samsung Display Co., Ltd., Yongin, Gyeonggi-do, KR;
Inventors:
Byeong-Beom Kim, Suwon-si, KR;
Je-Hyeong Park, Hwaseong-si, KR;
Jae-Hyoung Youn, Hwaseong-si, KR;
Jean-Ho Song, Yongin-si, KR;
Jong-In Kim, Suwon-si, KR;
Assignee:
Samsung Display Co., Ltd., , KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 23/31 (2006.01); H01L 27/12 (2006.01); C23C 14/14 (2006.01); C23C 14/34 (2006.01); H01L 23/52 (2006.01); H01L 23/482 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); C23C 14/14 (2013.01); C23C 14/34 (2013.01); H01L 23/4827 (2013.01); H01L 23/52 (2013.01); H01L 29/786 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A method for forming a thin film according to an exemplary embodiment of the present invention includes forming the thin film at a power density in the range of approximately 1.5 to approximately 3 W/cmand at a pressure of an inert gas that is in the range of approximately 0.2 to approximately 0.3 Pa. This process results in an amorphous metal thin film barrier layer that prevents undesired diffusion from adjacent layers, even when this barrier layer is thinner than many conventional barrier layers.