The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
Dec. 01, 2016
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, CN;
Shimin Ge, Shenzhen, CN;
Hejing Zhang, Shenzhen, CN;
Chihyuan Tseng, Shenzhen, CN;
Chihyu Su, Shenzhen, CN;
Wenhui Li, Shenzhen, CN;
Longqiang Shi, Shenzhen, CN;
Xiaowen Lv, Shenzhen, CN;
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Shenzhen, Guangdong, CN;
Abstract
A dual gate oxide semiconductor thin-film transistor (TFT) substrate includes a substrate; a bottom gate positioned on the substrate; a bottom gate isolation layer positioned on the substrate and the bottom gate; a first oxide semiconductor layer positioned on the bottom gate isolation layer above the bottom gate; an oxide conductor layer positioned on the bottom gate isolation layer at one side of the first oxide semiconductor layer; a top gate isolation layer positioned on the first oxide semiconductor layer, the oxide conductor layer, and the bottom gate isolation layer; a top gate positioned on the top gate isolation layer above a middle part of the first oxide semiconductor layer; a source and a drain positioned on the top gate isolation layer at two sides of the top gate; and a passivation layer positioned on the top gate isolation layer, the source, the drain, and the top gate.