The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2017

Filed:

Aug. 01, 2016
Applicant:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Inventor:

Xinpeng Wang, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 27/11521 (2017.01); H01L 27/11548 (2017.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11521 (2013.01); H01L 21/28273 (2013.01); H01L 21/762 (2013.01); H01L 21/76205 (2013.01); H01L 21/76224 (2013.01); H01L 27/11548 (2013.01); H01L 29/0649 (2013.01); H01L 29/42324 (2013.01); H01L 29/66825 (2013.01); H01L 29/7883 (2013.01);
Abstract

The present application provides a flash memory device. The flash memory device includes a semiconductor substrate; and a plurality of tunnel oxide layers formed on a surface of the semiconductor substrate. The flash memory device also includes a floating gate having a first portion with a width smaller than a width of the tunnel oxide layer and a second portion with a width greater than the width of the first portion formed on the first portion formed on each of the floating silicon oxide layers. Further, the flash memory device includes a plurality of shallow trench isolation structures formed in the surface of the semiconductor substrate between adjacent floating gates and the tunnel oxide layers; and liner oxide layers formed on side surfaces of the first portion of the floating gates.


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