The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
Jun. 23, 2014
Jintae Noh, Yongin-si, KR;
Bio Kim, Seoul, KR;
Su-jin Shin, Osan-si, KR;
Hanvit Yang, Suwon-si, KR;
Kihyun Hwang, Seongnam-si, KR;
Jintae Noh, Yongin-si, KR;
Bio Kim, Seoul, KR;
Su-Jin Shin, Osan-si, KR;
Hanvit Yang, Suwon-si, KR;
Kihyun Hwang, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
The inventive concepts provide methods of manufacturing a semiconductor device. The method includes forming a thin layer structure including insulating layers and sacrificial layers alternately and repeatedly stacked on a substrate, forming a through-hole penetrating the thin layer structure and exposing the substrate, forming a semiconductor layer covering an inner sidewall of the through-hole and partially filling the through-hole, oxidizing a first portion of the semiconductor layer to form a first insulating layer, and injecting oxygen atoms into a second portion of the semiconductor layer. An oxygen atomic concentration of the second portion is lower than that of the first insulating layer. Oxidizing the first portion and injecting the oxygen atoms into the second portion are performed using an oxidation process at the same time.