The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
Mar. 04, 2015
Sang Hoon Ahn, Goyang-si, KR;
Sangho Rha, Seongnam-si, KR;
Jongmin Baek, Suwon-si, KR;
Wookyung You, Suwon-si, KR;
Nae-in Lee, Seoul, KR;
Sang Hoon Ahn, Goyang-si, KR;
Sangho Rha, Seongnam-si, KR;
Jongmin Baek, Suwon-si, KR;
Wookyung You, Suwon-si, KR;
Nae-In Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device includes a first conductive pattern on a substrate, an insulating diffusion barrier layer conformally covering a surface of the first conductive pattern, the insulation diffusion barrier layer exposed by an air gap region adjacent to a sidewall of the first conductive pattern, and a second conductive pattern on the first conductive pattern, the second conductive pattern penetrating the insulating diffusion barrier layer so as to be in contact with the first conductive pattern.