The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2017

Filed:

Jul. 26, 2016
Applicant:

Fujifilm Corporation, Tokyo, JP;

Inventor:

Kosuke Yamashita, Haibara-gun, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H05K 1/11 (2006.01); H01L 21/48 (2006.01); H05K 3/40 (2006.01); H05K 3/46 (2006.01); H05K 1/02 (2006.01); H05K 1/03 (2006.01); H05K 3/36 (2006.01); C25D 3/00 (2006.01); C23C 18/00 (2006.01); H05K 1/14 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49838 (2013.01); H01L 21/486 (2013.01); H01L 21/4857 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 23/49894 (2013.01); H05K 1/0298 (2013.01); H05K 1/0306 (2013.01); H05K 1/115 (2013.01); H05K 3/368 (2013.01); H05K 3/4038 (2013.01); H05K 3/4611 (2013.01); C23C 18/00 (2013.01); C25D 3/00 (2013.01); H05K 1/144 (2013.01); H05K 2201/042 (2013.01); H05K 2201/10378 (2013.01); H05K 2203/0315 (2013.01);
Abstract

The present invention is to provide a microstructure capable of improving the withstand voltage of an insulating substrate while securing fine conductive paths, a multilayer wiring board, a semiconductor package, and a microstructure manufacturing method. The microstructure of the present invention has an insulating substrate having a plurality of through holes, and conductive paths consisting of a conductive material containing metal filling the plurality of through holes, in which an average opening diameter of the plurality of through holes is 5 nm to 500 nm, an average value of the shortest distances connecting the through holes adjacent to each other is 10 nm to 300 nm, and a moisture content is 0.005% or less with respect to the total mass of the microstructure.


Find Patent Forward Citations

Loading…