The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2017

Filed:

Nov. 23, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Stephen M. Gates, Ossining, NY (US);

Gregory M. Fritz, Wakefield, MA (US);

Eric A. Joseph, White Plains, NY (US);

Terry A. Spooner, Clifton Park, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76814 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/76883 (2013.01); H01L 21/76888 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/53209 (2013.01);
Abstract

A semiconductor device and a method of fabricating a contact to interface with an interconnect in a semiconductor device are described. The device includes a dielectric layer formed on a semiconductor layer, and a contact fabricated in a via formed within the dielectric layer. An interconnect formed above the contact interfaces with an exposed surface of the contact opposite a surface closest to the semiconductor layer. The contact includes a contact material in a first portion of the contact and an interface metal in a second portion of the contact.


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