The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
Feb. 05, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventor:
Jongseon Ahn, Yongin-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76808 (2013.01); H01L 21/0337 (2013.01); H01L 21/31144 (2013.01); H01L 21/76816 (2013.01);
Abstract
A method of manufacturing a semiconductor device may include forming an insulating layers on a substrate, forming a plurality of holes in an upper portion of the insulating layer, forming a mask layer having openings exposing at least a first set of the plurality of holes, etching a lower portion of the insulating layer exposed by one of the plurality of holes which is exposed by the mask layer to form a through hole in the insulating layer in combination with the one of the plurality of holes, and forming a conductive structure in the through hole.