The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
Oct. 30, 2015
Applicant:
Avago Technologies General Ip (Singapore) Pte. Ltd., Singapore, SG;
Inventors:
Akira Ito, Irvine, CA (US);
Shom Ponoth, Irvine, CA (US);
Assignee:
Avago Technologies General IP (Singapore) Pte. Ltd., Singapore, SG;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 21/283 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 21/225 (2006.01);
U.S. Cl.
CPC ...
H01L 21/283 (2013.01); H01L 29/66628 (2013.01); H01L 29/66659 (2013.01);
Abstract
A field effect transistor (FET) with raised source/drain region of the device so as to constrain the epitaxial growth of the drain region. The arrangement of the spacer layer is created by depositing a photoresist over the extended drain layer during a photolithographic process.