The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2017

Filed:

Jun. 16, 2016
Applicant:

Screen Holdings Co., Ltd., Kyoto, JP;

Inventors:

Hideaki Tanimura, Kyoto, JP;

Kaoru Matsuo, Kyoto, JP;

Kazuhiko Fuse, Kyoto, JP;

Shinichi Kato, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/324 (2006.01); H01L 21/225 (2006.01); H05B 3/00 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2253 (2013.01); H01L 21/324 (2013.01); H01L 21/67115 (2013.01); H05B 3/0047 (2013.01);
Abstract

Light is applied for preheating from a halogen lamp to a lower surface of a semiconductor wafer supported on a susceptor within a chamber. Thereafter, flash light is applied for flash heating from a flash lamp to an upper surface of the semiconductor wafer. Treatment gas supplied from a gas supply source is heated by a heater, and supplied into the chamber. A flow amount control valve is provided to increase a flow amount of the treatment gas supplied into the chamber. Contaminants discharged from a film of the semiconductor wafer during heat treatment are discharged to the outside of the chamber with a gas flow formed by a large amount of high-temperature treatment gas supplied into the chamber to reduce contamination inside the chamber.


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