The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2017

Filed:

Mar. 11, 2016
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Yuichi Ohsawa, Yokohama, JP;

Akio Ui, Tokyo, JP;

Junichi Ito, Yokohama, JP;

Chikayoshi Kamata, Kawasaki, JP;

Megumi Yakabe, Kawasaki, JP;

Saori Kashiwada, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/08 (2006.01); H01L 43/12 (2006.01); H01J 37/30 (2006.01); H01J 37/09 (2006.01); H01J 37/20 (2006.01); H01J 37/305 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01J 37/08 (2013.01); H01J 37/09 (2013.01); H01J 37/20 (2013.01); H01J 37/30 (2013.01); H01J 37/3053 (2013.01); H01L 43/12 (2013.01); H01J 2237/083 (2013.01); H01J 2237/0822 (2013.01); H01J 2237/3151 (2013.01); H01L 27/228 (2013.01);
Abstract

A device manufacturing apparatus and manufacturing method of a magnetic device. The device manufacturing apparatus can include a substrate holding portion configured to hold a substrate, an ion source, an anode disposed in a housing of the ion source, and a cathode disposed outside the housing of the ion source. A first opening can be disposed in a portion of the housing such the anode is exposed to a region between the anode and the substrate holding portion. The ion source can be configured to generate an ion beam with which the substrate is irradiated. A first structure can be disposed between the ion source and the substrate holding portion. The first structure can have a first through hole through which the ion beam can pass. The first structure can include a conductor, and an opening dimension of the first through hole can be equal to or larger than an opening dimension of the first opening.


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