The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
Feb. 17, 2015
Tritium direct conversion semiconductor device for use with gallium arsenide or germanium substrates
Applicant:
City Labs, Inc., Homestead, FL (US);
Inventors:
Assignee:
City Labs, Inc., Homestead, FL (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/02 (2006.01); G21H 1/06 (2006.01);
U.S. Cl.
CPC ...
G21H 1/06 (2013.01);
Abstract
A device for producing electricity. In one embodiment the device comprises a germanium substrate doped a first dopant type and a plurality of stacked material layers above the substrate. These stacked material layers further comprise an InGaP base layer doped the first dopant type, an InGaP emitter layer doped the second dopant type, a window layer having a lattice structure matched to the lattice structure of the emitter layer and doped the second dopant type and a beta particle source for generating beta particles.