The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2017

Filed:

Jul. 29, 2015
Applicant:

Ip Gem Group, Llc, Irvine, CA (US);

Inventors:

Rino Micheloni, Turate, IT;

Alessia Marelli, Dalmine, IT;

Stephen Bates, Canmore, CA;

Assignee:

IP GEM GROUP, LLC, Irvine, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G11C 16/26 (2006.01); G11C 16/14 (2006.01); G11C 16/34 (2006.01); G11C 29/52 (2006.01); G06F 11/10 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G06F 11/1044 (2013.01); G06F 11/1068 (2013.01); G11C 16/14 (2013.01); G11C 16/349 (2013.01); G11C 29/52 (2013.01); G11C 2029/5004 (2013.01);
Abstract

A nonvolatile memory system, a nonvolatile memory controller and a method for reducing latency of a memory controller are disclosed. The nonvolatile memory controller includes a storage module configured to store data indicating threshold voltage shift read parameters and corresponding index values. The nonvolatile memory controller includes a status circuit configured to determine at least one usage characteristic of a nonvolatile memory device, and a read circuit configured to determine whether a usage characteristic meets a usage characteristic threshold. When a usage characteristic is determined to meet the usage characteristic threshold, the read circuit is configured to perform all subsequent reads of the nonvolatile memory device using a threshold voltage shift read instruction identified using one or more of the threshold voltage shift read parameters.


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