The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2017

Filed:

Oct. 30, 2015
Applicant:

General Electric Company, Schenectady, NY (US);

Inventors:

Arie Shahar, Moshav Magshimim, IL;

Eliezer Traub, Ramat-Gan, IL;

Peter Rusian, Ashdod, IL;

Juan Carlos Rojo, Niskayuna, NY (US);

Assignee:

General Electric Company, Schenectady, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C30B 11/00 (2006.01); C30B 29/48 (2006.01);
U.S. Cl.
CPC ...
C30B 11/003 (2013.01); C30B 29/48 (2013.01); Y10T 117/1092 (2015.01);
Abstract

A system for growing a crystal is provided that includes a crucible, a furnace, and a heat transfer device. The crucible has a first volume to receive therein a material for growing a crystal. The furnace has an ampoule configured to receive the crucible within the ampoule. The furnace is configured to produce a lateral thermal profile combined with a vertical thermal gradient. The heat transfer device is disposed under the crucible and configured to produce a leading edge of growth of the crystal at a bottom of the crucible. The heat transfer device includes at least one elongate member disposed beneath the crucible and extending along a length of the crucible.


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