The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2017

Filed:

Jan. 27, 2016
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventor:

John Charles Ehmke, Garland, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B81C 99/00 (2010.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81C 99/004 (2013.01); B81C 1/00904 (2013.01);
Abstract

A method of leak detection of hermetically sealed cavities semiconductor devices is provided. Scribe streets are formed with access from each packaged device on a first substrate to the edge of the first substrate. The first substrate is attached to a second substrate, forming gaps between the two substrates. A cavity is formed around a packaged device on the first substrate by attaching a bond ring to the first substrate and an optically transparent window above the bonding ring. The cavity is evacuated. A high powered laser beam strikes the top surface of the device on the first substrate within the cavity and creates a vertical surface displacement of the first substrate. The vertical surface displacement is monitored using a separate interrogation laser beam. Leakage of the cavity can be measured by characterizing the resonance decay rate, Q.


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