The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2017

Filed:

Jul. 06, 2012
Applicants:

Tomonori Nagashima, Susono, JP;

Yasuhiko Takeda, Aichi-gun, JP;

Nicholas John Ekins-daukes, Kent, GB;

Daniel James Farrell, London, GB;

Inventors:

Tomonori Nagashima, Susono, JP;

Yasuhiko Takeda, Aichi-gun, JP;

Nicholas John Ekins-Daukes, Kent, GB;

Daniel James Farrell, London, GB;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); A61K 8/02 (2006.01); A61K 8/04 (2006.01); A61K 8/73 (2006.01); A61Q 11/00 (2006.01);
U.S. Cl.
CPC ...
A61K 8/0283 (2013.01); A61K 8/0266 (2013.01); A61K 8/042 (2013.01); A61K 8/731 (2013.01); A61K 8/732 (2013.01); A61Q 11/00 (2013.01); A61K 2800/262 (2013.01); A61K 2800/594 (2013.01); A61K 2800/621 (2013.01); A61K 2800/651 (2013.01);
Abstract

A photoelectric conversion device includes: a wavelength converting region that absorbs ambient light to generate electrons and holes, and recombines the generated electrons and holes to generate monochromatic light; and a photoelectric conversion region that has a p-n junction or p-i-n junction, absorbs the monochromatic light generated in the wavelength converting region to generate electrons and holes, and separates and moves the electrons and holes generated by absorption of the monochromatic light. The wavelength converting region includes: a carrier generating region that generates the electrons and holes; a light emitting region that generates the monochromatic light; and a carrier selective transfer region that is disposed between the carrier generating region and the light emitting region and that, of the electrons and holes generated in the carrier generating region, moves those electrons and holes having specific energies difference there between to the light emitting region.


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