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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9793886 B1

PDFFull Text
Date of Patent:
Oct. 17, 2017

Filed:

Sep. 14, 2015

Semiconductor device for high-voltage circuit

Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, JP;

Inventors:

Akihiro Jonishi, Matsumoto, JP;

Masashi Akahane, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-Shi, JP;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

John Poos

Int. Cl.
CPC ...
H03K 17/08 (2006.01); H03K 17/0812 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 27/07 (2006.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/739 (2006.01); H03K 17/20 (2006.01);
U.S. Cl.
CPC ...
H03K 17/08128 (2013.01); H01L 21/823493 (2013.01); H01L 27/0207 (2013.01); H01L 27/0629 (2013.01); H01L 27/0727 (2013.01); H01L 27/088 (2013.01); H01L 29/0615 (2013.01); H01L 29/7393 (2013.01); H03K 17/20 (2013.01); H01L 29/063 (2013.01);
Abstract

Provided is a semiconductor device capable of preventing a malfunction of a high-side gate driver circuit that is caused by a negative voltage surge. A diode is connected between a p-type bulk substrate configuring a semiconductor layer, and a first potential (GND potential), and a signal is transmitted from a control circuit that is formed in an n diffusion region configuring a first semiconductor region through a first level down circuit and a first level up circuit to a high-side gate driver circuit that is formed in an n diffusion region configuring a second semiconductor region. As a result, a malfunction of the high-side gate driver circuit that is caused by a negative voltage surge can be prevented.

Find Patent Forward Citations

Jonishi, Akihiro. (2017). Semiconductor device for high-voltage circuit (U.S. Patent No. 9793886). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9793886

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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