The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2017

Filed:

Sep. 05, 2014
Applicant:

Rf Micro Devices, Inc., Greensboro, NC (US);

Inventors:

David Q. Ngo, Phoenix, AZ (US);

Michael B. Thomas, Chandler, AZ (US);

Praveen Varma Nadimpalli, Chandler, AZ (US);

Assignee:

Qorvo US, Inc., Greensboro, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/02 (2006.01); H03F 3/19 (2006.01); H03F 3/21 (2006.01); H03G 3/20 (2006.01);
U.S. Cl.
CPC ...
H03F 1/0222 (2013.01); H03F 3/19 (2013.01); H03F 3/21 (2013.01); H03F 2200/408 (2013.01); H03F 2200/451 (2013.01); H03F 2203/21193 (2013.01);
Abstract

Radio frequency (RF) amplification devices are disclosed along with methods of providing power to an RF signal. In one embodiment, an RF amplification device includes an RF amplification circuit and a voltage regulation circuit. The RF amplification circuit includes a plurality of RF amplifier stages coupled in cascade. The voltage regulation circuit is coupled to provide a regulated voltage to a driver RF amplifier stage. The voltage regulation circuit is configured to generate the regulated voltage so that the maximum output power of the RF amplification circuit is provided approximately at a first power level while the supply voltage is above a threshold voltage level. The first power level should be within the physical capabilities of the RF amplification circuit, and thus, the RF amplification circuit is prevented from being damaged once the supply voltage is above the threshold voltage level.


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